Optoelectronic component with three-dimension quantum well structure and method for producing the same

ABSTRACT

An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet.

CROSS-REFERENCE TO RELATED APPLICATION

This is a divisional of U.S. patent application Ser. No. 12/697,603,filed Feb. 1, 2010, currently pending, the contents of each of which isincorporated herein by reference in its entirety.

FIELD OF THE INVENTION

The present invention generally relates to an optoelectronic component,and more particularly to an optoelectronic component withthree-dimension quantum well (QW) structure.

DESCRIPTION OF THE RELATED ART

A radiation emission in the short-wave visible and in the ultravioletspectral region can be realized with nitride compound semiconductormaterials because of large electronic band gap thereof. Thus, quantumwell structures made of nitride compound semiconductors are often usedin optoelectronic semiconductor components, such as a light emittingdiode (LED). In conventional optoelectronic semiconductor components,the quantum well structures are usually grown on a planar nitridecompound semiconductor layer with a preferred growth direction duringthe epitaxial production in the c direction ([0001] direction).

The quantum well structure is constituted by a stack of layers depositedone another and respectively having different material compositions,which leads to large piezoelectric fields because the nitride compoundsemiconductors have comparatively large lattice constant differences.Since the piezoelectric fields lead to a shift in the band edges of theconduction or valence band and lead to a spatial separation of electronsand holes produced by optical excitation, the recombination probabilityof electrons and holes and thus the probability of stimulated emissionof light may be reduced.

One improved optoelectronic semiconductor component able to achievelower piezoelectric fields is disclosed in US publication number2006/0060833 A1. However, as the temperature of the optoelectronicsemiconductor component increased, the luminous efficiency and thelifetime thereof may be decreased. Hence, it is important to produce anoptoelectronic semiconductor component with lower piezoelectric fieldsand higher heat dissipation efficiency.

SUMMARY OF THE INVENTION

The present invention is directed to an optoelectronic component withthree-dimension quantum well (QW) structure and a method for producingthe same for achieving lower piezoelectric fields and higher luminousefficiency.

The present invention provides an optoelectronic component withthree-dimension quantum well structure comprising a substrate, a firstsemiconductor layer, a transition layer, a quantum well structure and asecond semiconductor layer. The first semiconductor layer is disposed onthe substrate. The transition layer is grown on the first semiconductorlayer, contains a first nitride compound semiconductor material and hasat least a texture, wherein the texture has at least a first protrusionwith at least an inclined facet, at least a first trench with at leastan inclined facet and at least a shoulder facet connected between theinclined facets. The quantum well structure is grown on the texture andshaped by the protrusion, the trench and the shoulder facet.

According to an embodiment of the present invention, the optoelectroniccomponent further comprises a second semiconductor layer disposed on thequantum well structure and contains a second nitride compoundsemiconductor material with opposite conduction type to the firstnitride compound semiconductor material.

According to an embodiment of the present invention, the transitionlayer comprises at least two semiconductor material layers stacked oneanother. Within one texture, an uppermost semiconductor material layerhas at least a first protrusion with a pyramid contour or a truncatedpyramid contour and a lowermost semiconductor material layer has atleast a first trench with an inverse pyramid contour or an inversetruncated pyramid contour.

According to an embodiment of the present invention, a middlesemiconductor material layer has a second protrusion with a truncatedpyramid contour wider than and stacked under the first protrusion, or asecond trench with an inverse truncated pyramid contour wider than andformed over the first contour.

According to an embodiment of the present invention, a quantity of thetexture is plural. The textures may be aligned as a grid array orarranged as a pattern. In addition, a quantity of the shoulder facet ofat least one texture may be different from others. Alternatively,quantities of the shoulder facet of the textures may be all the same.

According to an embodiment of the present invention, the firstprotrusion is formed by a deposition process and the first trench isformed by an etching process.

According to an embodiment of the present invention, the quantum wellstructure comprises a plurality of barrier layers and a plurality ofquantum films arranged between the barrier layers.

The present invention further provides a method for producing anoptoelectronic component with three-dimension quantum well structurecomprising the following steps. Step A is growing a transition layer ona first semiconductor layer disposed on a substrate, wherein thetransition layer contains a first nitride compound semiconductormaterial and has at least a texture, and the texture has at least aprotrusion with at least an inclined facet, at least a trench with atleast an inclined facet and at least a shoulder facet connected betweenthe inclined facets. In addition, step B is growing a quantum wellstructure on at least one inclined facet. Furthermore, step C is growinga second semiconductor layer on the quantum well structure, wherein thesecond semiconductor layer contains a second nitride compoundsemiconductor material with opposite conduction type to the firstnitride compound semiconductor material.

According to an embodiment of the present invention, the step Acomprises the following steps. Step A1 is applying a first mask layer tothe first semiconductor layer, wherein the first mask layer has at leasta first opening exposing a part of the first semiconductor layer. StepA2 is growing a semiconductor material layer on the part of the firstsemiconductor layer, wherein the semiconductor material layer has thetrench with one inclined facet. Step A3 is removing the first mask layerto expose remaining the semiconductor layer. Step A4 is applying asecond mask layer to previous semiconductor material layer, wherein thesecond mask layer has at least a second opening exposing a part ofprevious semiconductor material layer. Step A5 is growing anothersemiconductor material layer having the protrusion with another inclinedfacet on the part of previous semiconductor material layer. Step A6 isremoving the second mask layer to expose previous semiconductor materiallayer, so as to form the shoulder facet. In addition, the steps A4 to A6may be repeated in sequence more than one time to form more than twosemiconductor material layers respectively having the protrusion or thetrench stacked to one another.

According to an embodiment of the present invention, the step Acomprises the following steps. Step A1 is growing a semiconductormaterial layer on the first semiconductor layer. Step A2 is applying afirst mask layer to the semiconductor material layer, wherein the firstmask layer has at least a first opening exposing a part of thesemiconductor material layer. Step A3 is etching the part of thesemiconductor material layer to form the trench with one inclined facet.Step A4 is removing the first mask layer to expose remaining saidsemiconductor material layer. Step A5 is applying a second mask layer toprevious semiconductor material layer, wherein the second mask layer hasat least a second opening exposing a part of previous semiconductormaterial layer. Step A6 is growing another semiconductor material layerhaving the protrusion with another inclined facet on the part ofprevious semiconductor material layer. Step A7 is removing the secondmask layer to expose previous semiconductor material layer, so as toform the shoulder facet. In addition, the steps A5 to A7 may be repeatedin sequence more than one time to form more than two semiconductormaterial layers respectively having the protrusion or the trench stackedto one another.

According to an embodiment of the present invention, a slope of eachinclined facet is adjusted by a growth speed of correspondingsemiconductor material layer.

According to an embodiment of the present invention, the inclined facetsare parallel to one another.

The present invention further provides another method for producing anoptoelectronic component with three-dimension quantum well structurecomprising the following steps. Step A is growing a transition layer ona buffer layer disposed on a substrate. Step B is applying a first masklayer to the transition layer, wherein the first mask layer has at leasta first opening exposing a part of the transition layer. Step C isetching the transition layer from the first opening to form a trench.Step D is removing the first mask layer. Step E is applying a secondmask layer to the transition layer, wherein the second mask layer has atleast a second opening exposing a different part of the transition layeradjacent to the trench. Step F is growing a protrusion over the secondopening. Step G is removing the second mask layer to expose the trenchand the protrusion. Step H is forming at least a pair of quantum wellstructures on the trench and the protrusion.

According to an embodiment of the present invention, the protrusion isaway from the trench at a distance. Herein, a shoulder facet isconnected between an inclined facet of the protrusion and an inclinedfacet of the trench when the first mask layer and the second layer areremoved. In addition, a slope of the inclined facet of the protrusionmay be adjusted by a growth speed of the protrusion. Furthermore, theinclined facets may be parallel to one another.

According to an embodiment of the present invention, the method furthercomprises growing a semiconductor layer on the pair of quantum wellstructures, wherein the transition layer contains a first nitridecompound semiconductor material and the second semiconductor layercontains a second nitride compound semiconductor material with oppositeconduction type to the first nitride compound semiconductor material.

According to an embodiment of the present invention, the method furthercomprises processing the following steps in sequence at least one timebetween the steps G and H. A first step is applying a third mask layerto the transition layer and the protrusion, wherein the third mask layerhas at least a third opening exposing a part of the protrusion. A secondstep is growing another protrusion over the third opening. In addition,a third step is removing the third mask layer to expose the trench andthe protrusions.

In contrast to the conventional epitaxy of quantum well structures on ac crystal face of a substrate, the three-dimension quantum wellstructure of the present invention grown on the inclined facet of theprotrusion or the trench may have lower piezoelectric fields generatedby strain because of anisotropic relationship between strain andpiezoelectric effect. In addition, since a total outer surface area islarger (≧2 times), heat dissipation efficiency and recombinationprobabilities of electrons and holes are higher. Thus, theoptoelectronic component with three-dimension quantum well structure mayhave higher luminous efficiency with semi-polar (a-plane), non-polar(m-plane) surfaces, larger current/power handling with ≧2 timesquantum-well area and longer lifetime.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a perspective view of an optoelectronic componentaccording to an embodiment of the present invention.

FIG. 2 illustrates a schematic view of the quantum well structure asillustrated in FIG. 1.

FIG. 3 illustrates a perspective view of a mask layer grown on asemiconductor material layer as illustrated in FIG. 1 before theprotrusion is grown thereon.

FIG. 4 illustrates a perspective view of a mask layer grown on asemiconductor material layer as illustrated in FIG. 1 before the trenchis formed thereon.

FIG. 5 illustrates a perspective view of an optoelectronic componentaccording to another embodiment of the present invention.

FIG. 6 illustrates a front view of an optoelectronic component accordingto another embodiment of the present invention.

FIGS. 7A to 7C respectively illustrates a top view of an optoelectroniccomponent according to an embodiment of the present invention.

FIG. 8 illustrates a block diagram of a method for producing anoptoelectronic component according to an embodiment of the presentinvention.

FIGS. 9A to 9C illustrate a method for growing the texture on thetransition layer according to an embodiment of the present invention.

FIGS. 10A to 10C illustrate a method for growing the texture on thetransition layer according to another embodiment of the presentinvention.

FIGS. 11A to 11C illustrate a method for growing the texture on thetransition layer according to another embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

Reference will now be made in detail to specific embodiments of thepresent invention. Examples of these embodiments are illustrated in theaccompanying drawings. While the invention will be described inconjunction with these specific embodiments, it will be understood thatit is not intended to limit the invention to these embodiments. In fact,it is intended to cover alternatives, modifications, and equivalents asmay be included within the spirit and scope of the invention as definedby the appended claims. In the following description, numerous specificdetails are set forth in order to provide a through understanding of thepresent invention. The present invention may be practiced without someor all of these specific details. In other instances, well-known processoperations are not described in detail in order not to obscure thepresent invention.

FIG. 1 illustrates a perspective view of an optoelectronic componentaccording to an embodiment of the present invention. FIG. 2 illustratesa schematic view of the quantum well structure as illustrated in FIG. 1.FIG. 3 illustrates a perspective view of a mask layer grown on asemiconductor material layer as illustrated in FIG. 1 before theprotrusion is grown thereon. In addition, FIG. 4 illustrates aperspective view of a mask layer grown on a semiconductor material layeras illustrated in FIG. 1 before the trench is formed thereon. Referringto FIG. 1 first, the optoelectronic component 10 a, for example an LED,comprises a substrate 100, a first semiconductor layer 200, a transitionlayer 300, a quantum well structure 400 and a second semiconductor layer500. As illustrated in FIG. 1, the quantum well structure 400 is athree-dimension quantum well structure.

The substrate 100 may be a sapphire substrate. In addition, the firstsemiconductor layer 200 is disposed on the substrate 100 and thetransition layer 300 is grown on the first semiconductor layer 200,wherein the first semiconductor layer 200 may be a GaN layer for being abuffer layer between the substrate 100 and the transition layer 300. Thetransition layer 300 contains a first nitride compound semiconductormaterial, for example n-doped GaN, and has a texture 310 a, wherein thetexture 310 a has a protrusion 312 with an inclined facet 312 a, atrench 314 with an inclined facet 314 a and a shoulder facet 316connected between the inclined facets 312 a, 314 a. The quantum wellstructure 400 is grown on the texture 310 a to cover at least one of theinclined facets 312 a, 314 a (FIG. 1 illustrating that the quantum wellstructure 400 covering all of the inclined facets 312 a, 314 a and theshoulder facet 316), so as to form a three-dimension quantum wellstructure shaped by the protrusion 312, the trench 314 and the shoulderfacet 316. In the present embodiment, the quantum well structure 400 maybe a multiple quantum well (MQW) structure as illustrated in FIG. 2,which comprises a plurality of barrier layers 410, for example made ofGaN, and a plurality of quantum films 420, for example made of InGaN,arranged between the barrier layers 410.

Furthermore, the second semiconductor layer 500 is disposed on thequantum well structure 400 and contains a second nitride compoundsemiconductor material with opposite conduction type to the firstnitride compound semiconductor material, for example p-doped GaN. In apreferred embodiment, the first nitride compound semiconductor materialmay be Si-doped GaN and the second nitride compound semiconductormaterial may be Mg-doped GaN. Note that the quantum well structure 400of the present invention grown on the inclined facets 312 a, 314 a withcrystal faces different to a c crystal face (or {0001} crystal face) mayhave anisotropic relationship between strain and piezoelectric effect.Thus, piezoelectric fields generated by strains are reduced and thedisadvantageous effects of piezoelectric fields on the opticalproperties of the optoelectronic component 10 a are reduced. Hence, incontrast to the conventional epitaxy of quantum well structures on a ccrystal face of a substrate, the quantum well structure 400 of thepresent invention may advantageously reduce piezoelectric fields, sothat the optoelectronic component 10 a may have higher luminousefficiency.

Furthermore, a total outer surface area of the three-dimension quantumwell structure 400 of the present invention may be larger, for exampleabout three times or more, than the conventional planar quantum wellstructure. Therefore, heat dissipation efficiency of the optoelectroniccomponent 10 a and recombination probabilities of electrons and holes inthe quantum well structure 400 may be higher, so that the optoelectroniccomponent 10 a of the present invention may have higher luminousefficiency and longer lifetime.

In the present embodiment, the transition layer 300 comprises twosemiconductor material layers 320, 330. The semiconductor material layer320 may be grown on the first semiconductor layer 200 first. Then a masklayer 600 a, for example made of silicon oxide or silicon nitride, withan opening 610 a exposing a part of the semiconductor material layer 320as illustrated in FIG. 3 may be grown on the semiconductor materiallayer 320. Thus, the semiconductor material layer 330 may be limited tobe grown on the exposed part of the semiconductor material layer 320later to form the protrusion 312 having a pyramid cross-sectionalcontour, and then the mask layer 600 a may be removed. Alternatively, amask layer 600 b with an opening 610 b exposing a part of thesemiconductor material layer 320 as illustrated in FIG. 4 may be grownon the semiconductor material layer 320. Thus, the semiconductormaterial layer 320 may be anisotropic etched later to form the trench314 having an inversed pyramid cross-sectional contour, and then themask layer 600 b may be removed.

Herein, the sequence of the steps for forming the protrusion 312 and thetrench 314 may be determined according to users' requirement. Inaddition, after the steps for forming the protrusion 312 and the trench314 are finished, the shoulder facet 316 is formed on the top surface ofthe semiconductor material layer 320 between the protrusion 312 and thetrench 314. Accordingly, the transition layer 300 having the texture 310a as illustrated in FIG. 1 is formed, and the three-dimension quantumwell structure 400 may be formed thereon later. Furthermore, in anon-illustrated embodiment, the protrusion may have a truncated pyramidcross-sectional contour and/or the trench may have an inversed truncatedpyramid cross-sectional contour.

FIGS. 5 and 6 illustrate perspective views of optoelectronic componentaccording to other embodiments of the present invention. For clearlyillustrating the textures 310 a, 310 b, 310 c, 310 d, the quantum wellstructure and the second semiconductor layer disposed on the transitionlayer 300 as illustrated in FIG. 1 are omitted in FIGS. 5 and 6.Referring to FIG. 5 first, the optoelectronic component 10 b illustratedin FIG. 5 is similar to the optoelectronic component 10 a illustrated inFIG. 1, besides that the optoelectronic component 10 a has only onetexture 310 a, but the optoelectronic component 10 b has four textures310 a arranged in a 2×2 array. Differently, referring to FIG. 6, besideshaving one texture 310 a similar to that the optoelectronic component 10a had, the optoelectronic component 10 c illustrated in FIG. 6 furtherhas three textures 310 b, 310 c, 310 d different to the texture 310 a.

In detail, the transition layer 300 comprises three semiconductormaterial layers, and the texture 310 b has two protrusions 312, 313, onetrench 314 and several shoulder facets 316. The protrusion 312 having apyramid contour is formed from the top semiconductor material layer. Theprotrusion 313 having a truncated pyramid contour wider than theprotrusion 312 is formed from the middle semiconductor material layerand stacked under the protrusion 312. The trench 314 having an inversepyramid contour is formed from the bottom semiconductor material layer.Thus, the shoulder facets 316 are respectively connected between sidefacets of the protrusion 312 and the protrusion 313, and between sidefacets of the protrusion 313 and the trench 314.

Further, the texture 310 c has one protrusion 312, two trenches 314, 315and several shoulder facets 316. Similar to the texture 310 b, theprotrusion 312 is formed from the top semiconductor material layer, andthe trench 314 is formed from the bottom semiconductor material layer.Instead of the protrusion 313 of the texture 310 b, the trench 315having an inverse truncated pyramid contour wider than the trench 314 isformed from the middle semiconductor material layer and formed over thetrench 314. Herein, the shoulder facets 316 are respectively connectedbetween side facets of the protrusion 312 and the trench 315, andbetween side facets of the trench 314 and the trench 315. In addition,the texture 310 d has one protrusion 312, one trench 314 and oneshoulder facet 316, wherein the protrusion 312 having a truncatedpyramid contour is formed from the top semiconductor material layer, thetrench 314 having an inverse pyramid contour is formed from the middlesemiconductor material layer, and the shoulder facet 316 is connectedbetween side facets of the protrusion 312 and the trench 314.

In a word, when a quantity of the texture is plural, all textures maynot only have the same contour as illustrated in FIG. 5, but also havedifferent contour as illustrated in FIG. 6. In addition, quantities ofthe shoulder facets in different textures may be not only all the sameas illustrated in FIG. 5, but also partially different as illustrated inFIG. 6. Furthermore, in a non-illustrated embodiment, part of thetextures may have a contour different from the others and the transitionlayer may comprise more semiconductor material layers. Thus, quantitiesof the shoulder facets in different textures may be all different.Moreover, each texture may further comprise a laser resonatorlongitudinally of perpendicularly connected thereon, so as to form alaser diode.

FIGS. 7A to 7C respectively illustrates a top view of an optoelectroniccomponent according to an embodiment of the present invention, wherein adetail contour of each texture in these embodiments may be any type asillustrated in the previous embodiments and are omitted herein. Indetail, besides arrangements as illustrated in the previous embodiments,the textures 310 may further be aligned as a 3×5 grid array in theoptoelectronic component 10 d as illustrated in FIG. 7A, or arranged asa pattern in the optoelectronic component 10 e as illustrated in FIG. 7Bwhen a quantity thereof is plural. Similarly, the textures 310 hereinmay not only all have the same contours, but also all or partially havedifferent contours. In another embodiment, the optoelectronic component10 f may further have two (or more) types of the textures 310, 310′ withdifferent sizes or different detail contours arranged as a pattern asillustrated in FIG. 7C.

Besides the previous embodiments, the following description furtherdiscloses methods for producing an optoelectronic component by aplurality of embodiments according to the present invention.

FIG. 8 illustrates a block diagram of a method for producing anoptoelectronic component according to an embodiment of the presentinvention. Referring to FIGS. 1 and 8, a person having ordinary skill inthe art may produce the optoelectronic component 10 a as illustrated inFIG. 1 by the methods as illustrated in FIG. 8. First, a transitionlayer 300 is grown on a first semiconductor layer 200 disposed on asubstrate 100, wherein the transition layer 300 contains a first nitridecompound semiconductor material and has a texture 310 a, and the texture310 a has a protrusion 312 with an inclined facet 312 a, a trench 314with an inclined facet 314 a and a shoulder facet 136 connected betweenthe inclined facets 312 a, 314 a (S100). Note that there are a lot ofmethods to be used for forming the protrusion 312 and the trench 314 onthe transition layer 300, and some embodiments of them are disclosedhereafter.

FIGS. 9A to 9C illustrate a method for growing the texture on thetransition layer according to an embodiment of the present invention.Referring to FIG. 9A, one of the approaches applies a mask layer 600 cwith an opening 610 c to the first semiconductor layer 200 first,wherein a part of the first semiconductor layer 200 is exposed by theopening 610 c. Next, referring to FIG. 9B, a semiconductor materiallayer 320 having a trench 314 with an inclined facet 314 a may be grownon the exposed part of the first semiconductor layer 200, and then themask layer 600 c may be removed. Note that this approach may need toform another semiconductor material layer 340 on the first semiconductorlayer 200 before the semiconductor material layer 320 is formed thereonand may use to form the trench with an inverse truncated pyramid contouronly.

After that, referring to FIG. 9C, another mask layer 600 d with anopening 610 d may be applied to the exposed first semiconductor layer200 and the semiconductor material layer 320, wherein a part of thesemiconductor material layer 320 is exposed by the opening 610 d.Thereafter, another semiconductor material layer 330 may be grown on theexposed part of the semiconductor material layer 320 to form aprotrusion 312 with another inclined facet 312 a, and then the masklayer 600 d may be removed, so as to form a shoulder facet 316. In anon-illustrated embodiment, the mask layer with an opening may beapplied to previous semiconductor material layer for several times toform more than two semiconductor material layers respectively having aprotrusion or a trench stacked to one another, so as to form a texturewith a plurality of shoulder facets.

FIGS. 10A to 10C illustrate a method for growing the texture on thetransition layer according to another embodiment of the presentinvention. Referring to FIG. 10A, another approach grows a semiconductormaterial layer 320 a on the first semiconductor layer 200 first. Next, amask layer 600 e may be applied to cover a part of the semiconductormaterial layer 320 a to be kept and an opening 610 e thereof may exposethe remaining part of the semiconductor material layer 320 a to beetched. After that, the exposed part of the semiconductor material layer320 a may be anisotropic etched, so as to form a semiconductor materiallayer 320 having a trench 314 with another inclined facet 314 a asillustrated in FIG. 10B, and then the mask layer 600 e may be removed.

After that, similar to the previous embodiment as illustrated in FIG.9C, another mask layer 600 f may be applied to the semiconductormaterial layer 320 and an opening 610 f thereof may expose a part of thesemiconductor material layer 320, and then another semiconductormaterial layer 330 may be grown on the exposed part of the semiconductormaterial layer 320 to form a protrusion 312 with another inclined facet312 a. Thereafter, the mask layer 610 f may be removed, so as to form ashoulder facet 316.

FIGS. 11A to 11C illustrate a method for growing the texture on thetransition layer according to another embodiment of the presentinvention. Alternatively, referring to FIG. 11A, an opening 610 g of amask layer 600 g may expose a part of the semiconductor material layer320 a where the protrusion 312 will be grown on first. Next, referringto FIG. 11B, another mask layer 600 h with an opening 610 h exposing thepart of the semiconductor material layer 320 a to be etched may beapplied to cover the protrusion 312 and the part of the semiconductormaterial layer 320 a to be kept after the protrusion 312 is grown andthe mask layer 600 g as illustrated in FIG. 11A is removed. And then,the mask layer 600 h may be removed after the semiconductor materiallayer 320 a is anisotropic etched, so as to form the shoulder facet 316and the semiconductor material layer 320 having the trench 314 with theinclined facet 314 a as illustrated in FIG. 11C.

In a word, each inclined facet of the texture may be formed by a growingprocess as the steps illustrated in FIGS. 9A to 9C, and a slope thereofmay be adjusted by a growth speed. Thus, the inclined facets may notonly be all parallel to one another, but also have some different slopeas users' requiring. In addition, some inclined facets may be formed bya growing process and some inclined facets may be formed by an etchingprocess as the steps illustrated in FIGS. 10A to 10C or FIGS. 11A to11C. Alternatively, in a non-illustrated embodiment, each inclined facetmay also be formed by an etching process.

Thereafter, referring to FIGS. 1 and 8 again, a quantum well structure400 is grown on the inclined facets 312 a, 314 a and the shoulder facet316 (S110), and then a second semiconductor layer 500 is grown on thequantum well structure 400, wherein the second semiconductor layer 500should contain a second nitride compound semiconductor material withopposite conduction type to the first nitride compound semiconductormaterial (S120). Up to now, the optoelectronic component 10 a is almostfinished.

In summary, in contrast to the conventional epitaxy of quantum wellstructures on a c crystal face of a substrate, the three-dimensionquantum well structure of the present invention grown on the inclinedfacet of the protrusion or the trench may have lower piezoelectricfields because of anisotropic relationship between strain andpiezoelectric effect. In addition, since a total outer surface area ofthe present invention is larger than the conventional art, heatdissipation efficiency and recombination probabilities of electrons andholes of the present invention may be higher. Thus, the optoelectroniccomponent with three-dimension quantum well structure of the presentinvention may have higher luminous efficiency and longer lifetime.

Although specific embodiments of the present invention have beendescribed, it will be understood by those of skill in the art that thereare other embodiments that are equivalent to the described embodiments.Accordingly, it is to be understood that the invention is not to belimited by the specific illustrated embodiments, but only by the scopeof the appended claims.

1. A method for producing an optoelectronic component withthree-dimension quantum well structure, comprising: A. growing atransition layer on a first semiconductor layer disposed on a substrate,wherein said transition layer contains a first nitride compoundsemiconductor material and has at least a texture, said texture has atleast a protrusion with at least an inclined facet, at least a trenchwith at least an inclined facet and at least a shoulder facet connectedbetween said inclined facets; B. growing a quantum well structure on atleast one of said inclined facets; and C. growing a second semiconductorlayer on said quantum well structure, wherein said second semiconductorlayer contains a second nitride compound semiconductor material withopposite conduction type to said first nitride compound semiconductormaterial.
 2. The method as claimed in claim 1, wherein said step Acomprises: A1. applying a first mask layer to said first semiconductorlayer, wherein said first mask layer has at least a first openingexposing a part of said first semiconductor layer; A2. growing asemiconductor material layer on said part of said first semiconductorlayer, wherein said semiconductor material layer has said trench withone of said inclined facets; A3. removing said first mask layer toexpose remaining said semiconductor layer; A4. applying a second masklayer to previous said semiconductor material layer, wherein said secondmask layer has at least a second opening exposing a part of previoussaid semiconductor material layer; A5. growing another semiconductormaterial layer having said protrusion with another one of said inclinedfacets on said part of previous said semiconductor material layer; andA6. removing said second mask layer to expose previous saidsemiconductor material layer, so as to form said shoulder facet.
 3. Themethod as claimed in claim 2, wherein said steps A4 to A6 are repeatedin sequence more than one time to form more than two said semiconductormaterial layers respectively having said protrusion or said trenchstacked to one another.
 4. The method as claimed in claim 1, whereinsaid step A comprises: A1. growing a semiconductor material layer onsaid first semiconductor layer; A2. applying a first mask layer to saidsemiconductor material layer, wherein said first mask layer has at leasta first opening exposing a part of said semiconductor material layer;A3. etching said part of said semiconductor material layer to form saidtrench with one of said inclined facets; A4. removing said first masklayer to expose remaining said semiconductor material layer; A5.applying a second mask layer to previous said semiconductor materiallayer, wherein said second mask layer has at least a second openingexposing a part of previous said semiconductor material layer; A6.growing another semiconductor material layer having said protrusion withanother one of said inclined facets on said part of previous saidsemiconductor material layer; and A7. removing said second mask layer toexpose previous said semiconductor material layer, so as to form saidshoulder facet.
 5. The method as claimed in claim 4, wherein said stepsA5 to A7 are repeated in sequence more than one time to form more thantwo said semiconductor material layers respectively having saidprotrusion or said trench stacked to one another.
 6. The method asclaimed in claim 1, wherein a slope of each of said inclined facets isadjusted by a growth speed of corresponding said semiconductor materiallayer.
 7. The method as claimed in claim 1, wherein said inclined facetsare parallel to one another.
 8. A method for producing an optoelectroniccomponent with three-dimension quantum well structure, comprising: A.growing a transition layer on a buffer layer disposed on a substrate; B.applying a first mask layer to said transition layer, wherein said firstmask layer has at least a first opening exposing a part of saidtransition layer; C. etching said transition layer from said firstopening to form a trench; D. removing said first mask layer; E. applyinga second mask layer to said transition layer, wherein said second masklayer has at least a second opening exposing a different part of saidtransition layer adjacent to said trench; F. growing a protrusion oversaid second opening; G. removing said second mask layer to expose saidtrench and said protrusion; and H. forming at least a pair of quantumwell structures on said trench and said protrusion.
 9. The method asclaimed in claim 8, wherein said protrusion is away from said trench ata distance.
 10. The method as claimed in claim 9, wherein a shoulderfacet is connected between an inclined facet of said protrusion and aninclined facet of said trench when said first mask layer and said secondlayer are removed.
 11. The method as claimed in claim 10, wherein aslope of said inclined facet of said protrusion is adjusted by a growthspeed of said protrusion.
 12. The method as claimed in claim 10, whereinsaid inclined facets are parallel to one another.
 13. The method asclaimed in claim 8, further comprising growing a semiconductor layer onsaid pair of quantum well structures, wherein said transition layercontains a first nitride compound semiconductor material and said secondsemiconductor layer contains a second nitride compound semiconductormaterial with opposite conduction type to said first nitride compoundsemiconductor material.
 14. The method as claimed in claim 8, furthercomprising processing the following steps in sequence at least one timebetween the steps G and H: applying a third mask layer to saidtransition layer and said protrusion, wherein said third mask layer hasat least a third opening exposing a part of said protrusion; growinganother protrusion over said third opening; and removing said third masklayer to expose said trench and said protrusions.